triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 1 dc - 10.5 ghz discrete hfet TGF4250-SCC key features and performance ? nominal pout of 34 dbm at 8.5 ghz ? nominal gain of 8.5 db at 8.5 ghz ? nominal pae of 53% at 8.5 ghz ? suitable for high reliability applications ? 4800 m x 0.5 m fet ? chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in) ? bias at 8 volts, 384 ma description the triquint TGF4250-SCC is a single gate 4.8 mm discrete gaas heterostructure field effect transistor (hfet) designed for high efficiency power applications up to 10.5 ghz in class a and class ab operation. typical performance at 2 ghz is 34 dbm power output, 13 db gain, and 53% pae. bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. the TGF4250-SCC is readily assembled using automatic equipment. for an application note on the use of hfets, refer to the triquint website for the millimeter wave division. primary applications ? cellular base stations ? high-reliability space ? military
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 2 table i maximum ratings symbol parameter 1/ value notes v ds drain to source voltage 12 v v gs gate to source voltage range 0 to -5.0 volts p d power dissipation see thermal data t ch operating channel temperature 150 c 2/, 3 / t stg storage temperature -65 to 200 c t m mounting temperature (30 seconds) 320 c 1/ these ratings represent the maximum values for this device. stresses beyond those listed under ?maximum ratings? may cause permanent damage to the device. these are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under ?dc probe characteristics? and ?rf probe characteristics? is not implied. exposure to maximum rated conditions for extended periods may affect device reliability. 2/ junction temperature will directly affect the device mean time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ these ratings apply to each individual fet TGF4250-SCC
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 3 TGF4250-SCC table ii dc probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit note i dss saturated drain current -- 1176 -- ma 1/ g m transconductance -- 792 -- ms 1/ v p pinch-off voltage 1 1.85 3 v 2/ v bgs breakdown voltage gate-source 17 22 30 v 2/ v bgd breakdown voltage gate-drain 17 22 30 v 2/ 1/ total for four fets 2/ v p , v bgs , and v bgd are negative. table iii electrical characteristics (t a = 25 c, nominal) bias conditions: vd = 8v, id = 200ma +/- 10% symbol parameter typical unit pout output power 34 dbm gp power gain 8.5 db pae power added efficiency 53 % note: the recommended bias current for hfets is 80 ma/mm. for this 4.8 mm hfet iq is 384 ma.
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 4 TGF4250-SCC t a =25 c typical performance
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 5 TGF4250-SCC typical performance
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 6 TGF4250-SCC thermal information
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 7 TGF4250-SCC
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 8 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. TGF4250-SCC mechanical drawing ** ** * *
triquint semiconductor texas : (972)994 8465 fax: (972)994 8504 web: www.triquint.com product data sheet december 16, 2002 9 assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGF4250-SCC note: die are shipped in gel pack unless otherwise specified.
|
